Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Electrical Characterization of W/HfO2 MOSFET with La2O3 Incorporation

Electrical measurements of voltage stressed Al2O3/GaAs MOSFET

Electrical characteristics of GaAs metal–oxide–semiconductor field effect transistor with atomic layer deposition deposited Al2O3 gate dielectric have been investigated. The IV characteristics were studied after various constant voltage stress (CVS) has been applied. A power law dependence of the gate leakage current (Ig) on the gate voltage (Vg) was found to fit the CVS data of the low positiv...

Investigation of the threshold voltage turn-around effect in long-channel n-MOSFETs due to hot-carrier stress

In this paper, we have investigated the turn-around effect of the threshold voltage (Vth) shift in the case of an n-type long channel MOSFET during hot-carrier stress. This effect is explained by the interplay between interface states and oxide traps, i.e. by the partial compensation of the rapidly created oxide charges by the more slowly created interface states. Significant hole trapping is o...

Improvement of a Nano-scale Silicon on Insulator Field Effect Transistor Performance using Electrode, Doping and Buried Oxide Engineering

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

Correlation between Gated-Diode R-G Current and Performance Degradation of SOI n-MOSFETs after F-N Stress Test

A correlation between the gated-diode R-G current and the performance degradation of SOI n-channel MOS transistor after F-N stress test has been demonstrated in this paper. Due to increase of interface traps after F-N stress test, the generation-recombination (R-G) current of the gateddiode in the SOI-MOSFET architecture increases while the performance characteristics of MOSFET transistor such ...